1.5W DC/DC Converter, Programmable Asymmetrical Outputs for IGBT/Si/SiC/Cascode GaN

The R9C1T18/R 1.5W isolated DC/DC converter is a versatile solution for isolated gate bias voltages, especially for transistors such as IGBTs, Si and SiC MOSFETs and cascode GaNs. This compact converter has a wide input voltage range of 8.5 - 18VDC and programmable asymmetrical output voltages that ensure precise control and power optimization for power electronics applications. With high 5kVAC/1min isolation, 1.4kVDC working voltage, a high CMTI of 150kV/μs and remarkable stability up to 150°C (>0.5W), it offers outstanding reliability, even in harsh high-power and high-frequency switching environments. The extremely low isolation capacitance of less than 3.5pF ensures minimal noise propagation across the isolation barrier. All of these exceptional features are packaged in a compact 7.5 x 12.83mm SMD form factor, making it an ideal choice for all isolated gate biasing requirements.

Technical data

• 1.5W isolated DC/DC converter
• Programmable asymmetrical output voltages
• For IGBT/Si/SiC/cascode GaN gate driver bias voltages
• High 5kVAC/1min insulation with 150kV/μs CMTI
•  1.5 W at -40°C to +120°C
•  Less than 3.5pF insulation capacitance
• Compact 7.5×12.83mm SMD housing
• 3-year guarantee